? 2006 ixys all rights reserved ds99561e(02/06) polarhv tm hiperfet power mosfet isoplus264 tm (electrically isolated back surface) v dss = 800 v i d25 = 40 a r ds(on) 150 m ? ? ? ? ? t rr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 3 ma 800 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 3000 a r ds(on) v gs = 10 v, i d = i t , note 1 150 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c40a i dm t c = 25 c, pulse width limited by t jm 150 a i ar t c = 25 c30a e ar t c = 25 c 100 mj e as t c = 25 c5j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ f c mounting force 28..150 / 6.4..30 n/lb weight 5g ixfl 60n80p s g d (isolated tab) isoplus264 g = gate d = drain s = source features l international standard isolated package l ul recognized package l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect l fast intrinsic diode advantages l easy to mount l space savings l high power density tm (ixfl)
ixys reserves the right to change limits, test conditions, and dimensions. ixfl 60n80p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , note 1 35 67 s c iss 18 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 44 pf t d(on) 36 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 29 ns t d(off) r g = 1 ? (external) 110 ns t f 26 ns q g(on) 250 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 90 nc q gd 78 nc r thjc 0.20 c/w r thcs 0.13 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 60 a i sm repetitive 150 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v 0.6 c i rm 6.0 a notes: 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus264 (ixfl) outline note: bottom heatsink meets 2500vrms isolation to the other pins. ref: ixys co 0128 r0 test current i t = 30 a
? 2006 ixys all rights reserved fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456789 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 30a value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 60a i d = 30a fig. 5. r ds(on) norm alized to i d = 30a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes ixfl 60n80p
ixys reserves the right to change limits, test conditions, and dimensions. ixfl 60n80p fig. 7. input admittance 0 10 20 30 40 50 60 70 80 4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 6.75 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1020304050607080 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 220 240 260 q g - nanocoulombs v gs - volts v ds = 400v i d = 30a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal resistance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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